HSM223C silicon epitaxial planar diode for high speed switching ade-208-092c (z) rev. 3 aug. 1995 features low capacitance, proof against high voltage. fast recovery time. mpak package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code HSM223C a8 mpak pin arrangement 1 nc
2 cathode
3 anode (top view) 2 1 3
HSM223C 2 absolute maximum ratings (ta = 25c) item symbol value unit peak reverse voltage v rm 85 v reverse voltage v r 80 v peak forward current i fm 300 ma non-repetitive peak forward surge current i fsm *4 a average forward current i o 100 ma junction temperature tj 125 c storage temperature tstg C55 to +125 c note: within 1s forward surge current. electrical characteristics (ta = 25c) item symbol min typ max unit test condition forward voltage v f1 0.76 1.0 v i f = 10ma v f2 0.88 1.0 i f = 50ma v f3 0.97 1.2 i f = 100ma reverse current i r 0.1 a v r = 80v capacitance c 0.5 2.0 pf v r = 0v, f = 1mhz reverse recovery time t rr 3.0 ns i f = 10ma, v r = 6v, r l = 50 w
HSM223C 3 forward voltage v (v) f forward current i (a) f 10 ? 10 ? 0 0.2 0.4 0.6 0.8 1.0 10 ? ta = ?5 c ta = 25 c 10 ? 10 ? 10 ? ta = 75 c fig.1 forward current vs. forward voltage reverse voltage v (v) r reverse current i (a) r 10 ? 10 ? 02040 60 80 100 10 ? 10 ? 10 ?0 10 ? 10 ? 10 ?1 ta = 50 c ta = 75 c ta = 25 c ta = 0 c ta = ?5 c fig.2 reverse current vs. reverse voltage
HSM223C 4 reverse voltage v (v) r 1.0 10 2 10 1.0 10 capacitance c (pf) ? 10 f = 1mhz fig.3 capacitance vs. reverse voltage package dimensions 0.16 0 ?0.10 + 0.10 ?0.06 0.4 + 0.10 ?0.05 0.95 0.95 1.9 2.8 + 0.3 ?0.1 2.8 + 0.2 ?0.6 0.65 + 0.1 ?0.3 1.5 0.65 + 0.1 ?0.3 1.1 + 0.2 ?0.1 0.3 a 8 laser mark 21 3 hitachi code jedec code eiaj code weight (g) mpak(1) sc-59a 0.011 1 2 3 nc cathode anode unit: mm
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